#silicon carbide

Collection of silicon carbide news, found 12 news.

The Silent Revolution: How Power Semiconductors Are Reshaping Industries

The Silent Revolution: How Power Semiconductors Are Reshaping Industries

  • 14th August 2024

Power semiconductors are essential components that function as efficient switches and rectifiers in electrical ...

Toshiba Releases 3rd Generation SiC MOSFETs for Industrial Equipment with Four-Pin Package that Reduces Switching Loss

Toshiba Releases 3rd Generation SiC MOSFETs for Industrial Equipment with Four-Pin Package that Reduces Switching Loss

  • 6th September 2023

 Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched silicon carbide (SiC) MOSFETs, ...

Toshiba Develops Industry’s First 2200V Dual Silicon Carbide(SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment

Toshiba Develops Industry’s First 2200V Dual Silicon Carbide(SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment

  • 5th September 2023

- Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s ...

Toshiba Develops Industry’s First 2200V Dual Silicon Carbide(SiC) MOSFET Module

Toshiba Develops Industry’s First 2200V Dual Silicon Carbide(SiC) MOSFET Module

  • 29th August 2023

 Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s ...

Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes

Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes

  • 13th July 2023

 Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the "TRSxxx65H series,” ...

Toshiba launches its 3rd generation SiC MOSFETs that contribute to the higher efficiency of industrial equipment

Toshiba launches its 3rd generation SiC MOSFETs that contribute to the higher efficiency of industrial equipment

  • 30th August 2022

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched new power devices, the “TWxxNxxxC ...

Toshiba’s newly launched 1200V and 1700V silicon carbide MOSFET modules will contribute to smaller, more efficient industrial equipment

Toshiba’s newly launched 1200V and 1700V silicon carbide MOSFET modules will contribute to smaller, more efficient industrial equipment

  • 26th January 2022

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two silicon carbide (SiC) MOSFET Dual ...

Toshiba launches silicon carbide MOSFET module that contributes to higher efficiency and miniaturization of industrial equipment

Toshiba launches silicon carbide MOSFET module that contributes to higher efficiency and miniaturization of industrial equipment

  • 25th February 2021

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “MG800FXF2YMS3,” a silicon ...

Toshiba launches 1200V silicon carbide MOSFET

Toshiba launches 1200V silicon carbide MOSFET

  • 19th October 2020

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TW070J120B,” a ...

MPM Holdings Inc. enters into agreement to be acquired by investor group consisting of SJL Partners, KCC Corporation and Wonik QnC Corporation

MPM Holdings Inc. enters into agreement to be acquired by investor group consisting of SJL Partners, KCC Corporation and Wonik QnC Corporation

  • 13th September 2018

- MPM Holdings Inc. ("Momentive" or the "Company") (OTCQX:MPMQ), a global silicones and advanced materials company, and ...

Toshiba Electronic Devices & Storage Corporation adds second-generation 650V SiC Schottky barrier diodes in DPAK surface-mount type package

Toshiba Electronic Devices & Storage Corporation adds second-generation 650V SiC Schottky barrier diodes in DPAK surface-mount type package

  • 17th October 2017

- Toshiba Electronic Devices & Storage Corporation (TDSC) has enhanced its diode portfolio with the addition of ...

Toshiba launches second generation 650V SiC schottky barrier diodes with improved surge forward current

Toshiba launches second generation 650V SiC schottky barrier diodes with improved surge forward current

  • 12th January 2017

- Toshiba Corporation’s (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the ...