Kawasaki, Japan--(ANTARA/Business Wire)-- Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a gate driver photocoupler, “TLP5814H,” with an output of +6.8A/-4.8A, in a small size SO8L package, that incorporates an active Miller clamp function for driving silicon carbide (SiC) MOSFETs. Volume shipments start today.


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In circuits such as inverters, where MOSFETs or IGBTs are used in series, gate voltage can be generated by a Miller current[1] when the lower arm[2] is turned off, causing malfunctions such as short circuits in the upper and lower arms[3]. A commonly used protection function to prevent this is the application of a negative voltage to the gate when it is turned off.



For some SiC MOSFETs, which commonly feature higher voltage, lower on-resistance and faster switching characteristics than silicon (Si) MOSFETs, sufficient negative voltage cannot be applied between the gate and source. In this case, an active Miller clamp circuit can be used to flow the Miller current from the gate to ground, preventing the short circuiting without the need to apply the negative voltage. However, there are cost-cutting designs that reduce the negative voltage applied to the gate when the IGBTs are turned off, and in these cases, gate drivers with a built-in active Miller clamp are an option for consideration.



The new product has a built-in active Miller clamp circuit, so there is no need for an additional power supply for negative voltage and external active Miller clamp circuits. This provides a safety function for the system and also promotes system miniaturization by reducing the number of external circuits. The active Miller clamp circuit has a channel resistance of 0.69Ω (typ.) and a peak clamp sinking current rating of 6.8A, making it suitable as a gate driver for SiC MOSFETs, which are highly sensitive to changes in gate voltage.



TLP5814H has an operating temperature rating of -40 to 125°C, achieved by enhancing the optical output of the infrared emitting diode on the input side and optimizing the design of the photo detector devices (photodiode arrays) to improve optical coupling efficiency. This makes it suitable for industrial equipment that require strict thermal management, such as photovoltaic (PV) inverters and uninterruptible power supplies (UPSs). Its propagation delay time and propagation delay skew are also specified in the operating temperature rating range. Its package, a small size SO8L, 5.85 × 10 × 2.1mm (typ.), helps improve the flexibility of parts layout on a system board. In addition, it features a minimum creepage distance of 8.0mm, allowing it to be used for applications requiring high insulation performance.



Toshiba will continue to develop photocoupler products that contribute to enhancing the safety function of industrial equipment.



Notes:
[1] Miller current: Electric current generated when high dv/dt voltage is applied to capacitance between the drain and gate of a MOSFET or between the collector and gate of an IGBT.
[2] The lower arm is the part that draws current from the load of a circuit that uses power devices, such as inverters in series to the negative power supply (or ground). The upper arm is the part that supplies current from the power supply to the load.
[3] Short circuited in the upper and lower arms: A phenomenon in which the upper and lower power devices turn on at the same time due to a malfunction caused by noise or the malfunction of power devices due to Miller current during switching.



Applications



Industrial equipment



• PV inverters, UPSs, industrial inverters, AC servo drives, etc.



Suitable devices for TLP5814H
SiC MOSFETs High-voltage Si MOSFETs with over 300V rating IGBTs
Excellent Good Applicable



Features



• Built-in Active Miller Clamp function
• Peak output current rating: IOP= +6.8A/-4.8A
• High operating temperature rating: Topr (max)=125°C



Main Specifications



(Unless otherwise specified, Ta=-40 to 125°C)
Part number TLP5814H
Active Miller Clamp function Built-in
Packages Name SO8L
Size (mm) Typ. 5.85×10×2.1
Absolute
maximum
ratings Operating temperature Topr (°C) -40 to 125
Peak output current IOPL/IOPH (A) +6.8/-4.8
Peak clamp sinking current ICLAMP (A) +6.8
Recommended
operating
conditions Supply voltage VCC (V) 13 to 23
Input on-state current IF(ON) (mA) 4.5 to 10
Electrical
characteristics High-level supply current ICCH (mA) VCC–VEE=23V Max 5.0
Low-level supply current ICCL (mA) Max 5.0
Threshold input current (L/H) IFLH (mA) Max 3.0
UVLO threshold voltage VUVLO＋ (V) Max 13.2
Switching
characteristics Propagation delay time (L/H) tpLH (ns) VCC=23V Max 150
Propagation delay time (H/L) tpHL (ns) VCC=23V Max 130
Common-mode transient immunity CMH, CML (kV/μs) Ta=25°C Min ±70
Isolation
characteristics Isolation voltage BVS (Vrms) Ta=25°C Min 5000
Sample Check & Availability Buy Online



Follow the link below for more on the new product.



Follow the link below for more on Toshiba’s isolators/solid state relays.



To check availability of the new products at online distributors, visit:
TLP5814H



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* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.



About Toshiba Electronic Devices & Storage Corporation



Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.



Its 19,400 employees around the world share a determination to maximize product value, and to promote close collaboration with customers in the co-creation of value and new markets. The company looks forward to building and to contributing to a better future for people everywhere.






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Contacts
Customer Inquiries
Optoelectronic Device Sales & Marketing Dept.
Tel: +81-44-548-2218



Media Inquiries:
Chiaki Nagasawa
Digital Marketing Dept.
Toshiba Electronic Devices & Storage Corporation



Source: Toshiba Electronic Devices & Storage Corporation

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